METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
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United States of America Patent
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Issued Date -
Aug 4, 2016
app pub date -
Jun 16, 2015
filing date -
Jun 16, 2015
priority date (Note) -
Abandoned
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Abstract
According to one embodiment, a method for manufacturing a semiconductor device includes modifying surfaces of the first mask films and surfaces of the second mask films. The method includes setting back one first mask film in the first direction until a second mask film adjacent to the one first mask film in the first direction is exposed, by etching with selectivity with respect to modified surfaces of the first and second mask films, and broadening an exposed region of the multilayer body. The method includes etching one stacked film exposed at a surface side in the exposed region of the multilayer body, in the stacking direction.
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