SWITCHING RESISTANCE MEMORY DEVICES WITH INTERFACIAL CHANNELS

Number of patents in Portfolio can not be more than 2000

United States of America Patent

APP PUB NO 20160225823A1
SERIAL NO

14916766

Stats

ATTORNEY / AGENT: (SPONSORED)

Importance

Loading Importance Indicators... loading....

Abstract

See full text

A switching resistance memory device with an interfacial channel includes a stack made of a layer of a first material and a layer of a second material. The layers form an interface, with the interface comprising the interfacial channel along which charged species can travel. A first electrode contacts a first edge of the stack, and a second electrode contacts a second edge of the stack.

Loading the Abstract Image... loading....

First Claim

See full text

Family

Loading Family data... loading....

Patent Owner(s)

Patent OwnerAddressTotal Patents
HEWLETT PACKARD ENTERPRISE DEVELOPMENT LPHOUSTON, TX8793

International Classification(s)

  • [Classification Symbol]
  • [Patents Count]

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Wang, Shih-Yuan Palo Alto, US 300 2943
Williams, R Stanley Palo Alto, US 260 4264
Yang, Jianhua Palo Alto, US 120 1011

Cited Art Landscape

Patent Info (Count) # Cites Year
 
HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP (1)
* 2011/0266,510 Controlled Placement of Dopants in Memristor Active Regions 12 2009
 
MICRON TECHNOLOGY, INC. (1)
* 2012/0261,638 VERTICAL MEMORY CELL FOR HIGH-DENSITY MEMORY 27 2011
* Cited By Examiner

Patent Citation Ranking

Forward Cite Landscape

  • No Forward Cites to Display