In situ nitrogen doping of co-evaporated copper-zinc-tin-sulfo-selenide by nitrogen plasma
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United States of America Patent
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May 28, 2019
Grant Date -
Aug 4, 2016
app pub date -
Jan 30, 2015
filing date -
Jan 30, 2015
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Abstract
A method and apparatus for manufacturing a nitrogen-doped CZTSSe layer for a solar cell is disclosed. A substrate is mounted in a vacuum chamber. A plurality of effusion cells are placed within the vacuum chamber in order to evaporate copper, zinc, tin, sulfur, and/or selenium to form elemental vapors in a region proximate the substrate. An RF-based nitrogen source delivers a nitrogen plasma in the region proximal to the substrate. The elemental vapors and the nitrogen plasma form a gas mixture in the region near the substrate, which then react at the substrate to form a CZTSSe absorber layer for a solar cell.
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