Interconnects based on subtractive etching of silver
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United States of America Patent
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Feb 7, 2017
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app pub date -
Feb 5, 2015
filing date -
Feb 5, 2015
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Abstract
A method for forming at least one Ag or Ag based alloy feature in an integrated circuit, including providing a blanket layer of Ag or Ag based alloy in a multi-layer structure on a substrate. The method further includes providing a hard mask layer over the blanket layer of Ag or Ag based alloy. The method further includes performing an etch of the blanket layer of Ag or Ag based alloy, wherein a portion of the blanket layer of Ag or Ag based alloy that remains after the etch forms one or more conductive lines. The method further includes forming a liner that surrounds the one or more conductive lines. The method further includes depositing a dielectric layer on the multi-layer structure.
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