Sloped finFET with methods of forming same

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 9985112
APP PUB NO 20160233246A1
SERIAL NO

14616018

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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Embodiments of the present disclosure provide an integrated circuit (IC) structure, which can include: a semiconductor fin; a gate dielectric positioned above a first region of the semiconductor fin; a spacer positioned above a second region of the semiconductor fin and adjacent to the gate dielectric; and a source/drain region contacting a third region of the semiconductor fin; wherein the first region of the semiconductor fin includes substantially vertical sidewalls, and the third region of the semiconductor fin includes sloped sidewalls.

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Patent Owner(s)

  • INTERNATIONAL BUSINESS MACHINE CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Anderson, Brent A Jericho, US 533 6628
Nowak, Edward J Essex Junction, US 635 14932

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