SEMICONDUCTOR STRUCTURE WITH NANOWIRE STRUCTURES AND MANUFACTURING METHOD THEREOF
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United States of America Patent
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app pub date -
Mar 20, 2015
filing date -
Feb 6, 2015
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Abstract
The present invention provides a semiconductor structure, including a substrate, a first nanowire structure disposed on the substrate, and the first nanowire structure includes a gate region and a source/drain region The diameter of the first nanowire structure within the gate region is different from the diameter of the first nanowire structure within the source/drain region.
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