Silicon nanocrystal light emitting diode and fabricating method thereof

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United States of America Patent

PATENT NO 9640736
APP PUB NO 20160233369A1
SERIAL NO

15013803

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Abstract

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Disclosed is a silicon nano crystal light emitting diode, including: a photoelectric conversion layer formed of a silicon nitride layer including a silicon nano crystal; an electron injection layer formed on the photoelectric conversion layer; and a hole injection layer, which faces the electron injection layer with the photoelectric conversion layer interposed therebetween, has an energy band gap higher than that of the photoelectric conversion layer, and has a refractive index lower than that of a silicon thin film.

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Patent Owner(s)

  • ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Ahn, Chang Geun Daejeon, KR 27 561
Huh, Chul Daejeon, KR 135 731
Kim, Bong Kyu Daejeon, KR 52 148

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