Memory device

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United States of America Patent

PATENT NO 9893280
APP PUB NO 20160233421A1
SERIAL NO

14793891

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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A memory device according to an embodiment includes an insulating layer containing silicon, an interface layer provided on the insulating layer and containing a chalcogenide compound of a transition metal, and a conductive layer provided on the interface layer, containing antimony or bismuth, and having a superlattice structure.

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Patent Owner(s)

  • TOSHIBA MEMORY CORPORATION

International Classification(s)

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Suzuki, Kunifumi Yokohama, JP 31 56
Tominaga, Junji Tsukuba, JP 76 1074

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