Atomic-layer deposition method using compound gas jet
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United States of America Patent
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Dec 27, 2016
Grant Date -
Aug 18, 2016
app pub date -
Feb 13, 2015
filing date -
Feb 13, 2015
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Abstract
A method for depositing a thin film on a substrate using atmospheric pressure atomic-layer deposition includes providing a chamber having an atmosphere and a stationary support located in the chamber. The moveable substrate is located in a spatial relationship with the stationary support. A pressurized compound fluid flow, including an inert fluid surrounding a reactive fluid, is provided simultaneously through the stationary support that impinges on at least a portion of the moveable substrate to fluidically levitate the moveable substrate and expose the moveable substrate to the compound fluid flow to deposit a thin film on the moveable substrate.
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