CMOS NFET and PFET comparable spacer width

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 9627382
SERIAL NO

15079613

Stats

ATTORNEY / AGENT: (SPONSORED)

Importance

Loading Importance Indicators... loading....

Abstract

See full text

Embodiments of the present disclosure provide a structure including: a p-type field effect transistor (pFET device) and an n-type field effect transistor (nFET device) each having sidewall spacers on opposite sidewalls of a gate and source drain region adjacent to the sidewall spacers, a distance between the pFET source drain region and the pFET gate is substantially equal to a distance between the nFET source drain region and the nFET gate.

Loading the Abstract Image... loading....

First Claim

See full text

Family

Loading Family data... loading....

Patent Owner(s)

  • INTERNATIONAL BUSINESS MACHINES CORPORATION

International Classification(s)

  • [Classification Symbol]
  • [Patents Count]

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Cheng, Kangguo Schenectady, US 3073 29638
Ok, Injo Loudonville, US 167 690
Seo, Soon-Cheon Glenmont, US 194 1179

Cited Art Landscape

Load Citation

Patent Citation Ranking

Forward Cite Landscape

Load Citation

Maintenance Fees

Fee Large entity fee small entity fee micro entity fee due date
7.5 Year Payment $3600.00 $1800.00 $900.00 Oct 18, 2024
11.5 Year Payment $7400.00 $3700.00 $1850.00 Oct 18, 2028
Fee Large entity fee small entity fee micro entity fee
Surcharge - 7.5 year - Late payment within 6 months $160.00 $80.00 $40.00
Surcharge - 11.5 year - Late payment within 6 months $160.00 $80.00 $40.00
Surcharge after expiration - Late payment is unavoidable $700.00 $350.00 $175.00
Surcharge after expiration - Late payment is unintentional $1,640.00 $820.00 $410.00