Importance

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Abstract

According to one embodiment, a method for manufacturing a semiconductor device includes forming a first film on a multilayer body including two or more stacked films. One stacked film includes a first layer and a second layer. The first film includes a plurality of regions different in aperture ratio. The method includes forming a mask layer by forming a second film on the first film and in apertures formed in the first film. The mask layer is thicker in a region in which the aperture ratio is lower. The mask layer has a multilevel upper surface. The method includes eliminating a thinnest portion of the mask layer to expose part of the multilayer body by etching back the multilevel upper surface. The method includes etching one stacked film on a surface side of an exposed region of the multilayer body in a stacking direction.

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First Claim