Nonvolatile semiconductor memory device

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United States of America Patent

PATENT NO 9536898
APP PUB NO 20160240556A1
SERIAL NO

15141456

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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A nonvolatile semiconductor memory device of an embodiment includes: a semiconductor layer; a tunnel insulating film that is formed on the semiconductor layer and includes a first organic molecular film including first organic molecules each having an alkyl molecular chain as the main chain; a charge storage layer formed on the tunnel insulating film, the charge storage layer being made of an inorganic material; a block insulating film formed on the charge storage layer; and a control gate electrode formed on the block insulating film.

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Patent Owner(s)

  • TOSHIBA MEMORY CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Asakawa, Koji Kanagawa, JP 222 4322
Hattori, Shigeki Kanagawa, JP 54 323
Morota, Misako Kanagawa, JP 12 30
Nishizawa, Hideyuki Tokyo, JP 71 681
Terai, Masaya Kanagawa, JP 34 161

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