Method of manufacturing semiconductor device

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 9461086
APP PUB NO 20160240576A1
SERIAL NO

14995397

Stats

ATTORNEY / AGENT: (SPONSORED)

Importance

Loading Importance Indicators... loading....

Abstract

See full text

A method of manufacturing a semiconductor device, comprising forming an insulating member on a structure having a height difference, and forming openings in the insulating member, the forming openings including first etching under a condition with a microloading phenomenon and second etching under a condition with a reverse microloading phenomenon, wherein the first etching is stopped before an upper face of the structure is exposed and then the second etching is started.

Loading the Abstract Image... loading....

First Claim

See full text

Family

Loading Family data... loading....

Patent Owner(s)

  • CANON KABUSHIKI KAISHA

International Classification(s)

  • [Classification Symbol]
  • [Patents Count]

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Kanome, Atsushi Tokyo, JP 7 10
Usui, Takashi Ashigarakami-gun, JP 220 1141

Cited Art Landscape

Load Citation

Patent Citation Ranking

Forward Cite Landscape

Load Citation

Maintenance Fees

Fee Large entity fee small entity fee micro entity fee due date
7.5 Year Payment $3600.00 $1800.00 $900.00 Apr 4, 2024
11.5 Year Payment $7400.00 $3700.00 $1850.00 Apr 4, 2028
Fee Large entity fee small entity fee micro entity fee
Surcharge - 7.5 year - Late payment within 6 months $160.00 $80.00 $40.00
Surcharge - 11.5 year - Late payment within 6 months $160.00 $80.00 $40.00
Surcharge after expiration - Late payment is unavoidable $700.00 $350.00 $175.00
Surcharge after expiration - Late payment is unintentional $1,640.00 $820.00 $410.00