Doped zinc oxide and n-doping to reduce junction leakage

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United States of America Patent

PATENT NO 9620592
APP PUB NO 20160240620A1
SERIAL NO

14620885

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Abstract

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A semiconductor device includes a substrate and a p-doped layer including a doped III-V material on the substrate. An n-doped layer is formed on the p-doped layer, the n-doped layer including a doped III-V material. A contact interface layer is formed on the n-doped layer. The contact interface layer includes a II-VI material. A contact metal is formed on the contact interface layer to form an electronic device.

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Patent Owner(s)

  • INTERNATIONAL BUSINESS MACHINES CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
de, Souza Joel P Putnam Valley, US 154 1022
Fogel, Keith E Hopewell Junction, US 270 4155
Kim, Jeehwan Los Angeles, US 247 1233
Maurer, Siegfried L Stormville, US 13 125
Sadana, Devendra K Pleasantville, US 897 9950

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