SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
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United States of America Patent
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Issued Date -
Aug 18, 2016
app pub date -
May 20, 2015
filing date -
Feb 18, 2015
priority date (Note) -
Abandoned
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Abstract
A device includes a first and a second semiconductor-layer. The second semiconductor-layer is on the first semiconductor-layer, and has a first and a second side-surface. A first gate-dielectric is on the first semiconductor-layer. A second gate-dielectric is on the first side-surface. A gate has a bottom surface facing the first semiconductor-layer, and a third side-surface facing the first side-surface. A first diffusion-layer of a first conductivity-type is in a region in the second semiconductor-layer on a side of the second side-surface, and forms a junction with a region in the second semiconductor-layer on a side of the first side-surface. A silicide is on the second side-surface. A source of the first conductivity-type is in the first semiconductor-layer on a side of the third side-surface. A drain layer of a second conductivity-type is in the first semiconductor-layer on a side of a fourth side-surface of the gate electrode.
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