SEMICONDUCTOR DEVICE HAVING A SILICON AND GERMANIUM MATERIAL FILLING A CAVITY REGION COMPRISING A NOTCH REGION FORMED WITHIN A SEMICONDUCTOR SUBSTRATE
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United States of America Patent
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Apr 20, 2015
filing date -
Feb 13, 2015
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Abandoned
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Abstract
The present invention is directed to semiconductor processes and devices. More specifically, embodiments of the present invention provide a semiconductor device that comprises a shaped cavity formed from two trench structures, and the shaped cavity is filled with silicon and germanium material. There are other embodiments as well.
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