PLASMONIC LIGHT EMITTING DIODE

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United States of America Patent

APP PUB NO 20160240729A1
SERIAL NO

14988474

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Abstract

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A light emitting diode includes a diode structure containing a quantum well, an enhancement layer, and a barrier layer between the enhancement layer and the quantum well. The enhancement layer supports plasmon oscillations at a frequency that couples to photons produced by combination of electrons and holes in the quantum well. The barrier layer serves to block diffusion between the enhancement layer and the diode structure.

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Patent Owner(s)

Patent OwnerAddressTotal Patents
HEWLETT PACKARD ENTERPRISE DEVELOPMENT LPHOUSTON, TX8793

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Fattal, David A Palo Alto, US 136 485
Fiorentino, Marco Palo Alto, US 98 499
Tan, Michael Renne Ty Palo Alto, US 124 265
Wang, Shih-Yuan Palo Alto, US 300 2943

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