PLASMONIC LIGHT EMITTING DIODE

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United States of America Patent

SERIAL NO

14988474

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Abstract

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A light emitting diode includes a diode structure containing a quantum well, an enhancement layer, and a barrier layer between the enhancement layer and the quantum well. The enhancement layer supports plasmon oscillations at a frequency that couples to photons produced by combination of electrons and holes in the quantum well. The barrier layer serves to block diffusion between the enhancement layer and the diode structure.

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Patent Owner(s)

Patent OwnerAddress
HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP1701 EAST MOSSY OAKS ROAD SPRING TX 77389

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Fattal, David A Palo Alto, US 272 4064
Fiorentino, Marco Palo Alto, US 142 2200
Tan, Michael Renne Ty Palo Alto, US 182 932
Wang, Shih-Yuan Palo Alto, US 322 4488

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