LIGHT-EMITTING DEVICE AND PRODUCTION METHOD THEREFOR
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United States of America Patent
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Issued Date -
Aug 18, 2016
app pub date -
Feb 4, 2016
filing date -
Feb 12, 2015
priority date (Note) -
Abandoned
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Abstract
The present invention provides a light-emitting device exhibiting improved light extraction performance. The light-emitting device is of a flip-chip type wherein a Group III nitride semiconductor layer is disposed on one surface of a GaN substrate, light is extracted from a rear surface of the substrate (the other surface of the substrate), and an uneven structure is formed on the rear surface of the substrate. An antireflection film is continuously formed on the uneven structure and the side surfaces of the GaN substrate. The antireflection film is a single layer made of Al2O3 having a refractive index smaller than that of the GaN substrate and larger than that of the sealing material. Moreover, the antireflection film is formed along the ridges and recesses of the uneven structure without being filled. The antireflection film prevents reflection between the GaN substrate and the sealing material, thereby improving the light extraction performance.
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