Pattern forming method and manufacturing method for semiconductor device

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 9627218
APP PUB NO 20160247687A1
SERIAL NO

14729474

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Abstract

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According to one embodiment, a mask material is formed on a processing layer, a mask pattern with a top surface and a bottom surface is formed on the mask material, a protective film is formed on the top surface of the mask pattern, and after the formation of the protective film, the bottom surface of the mask pattern is etched in a depth direction.

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Patent Owner(s)

  • TOSHIBA MEMORY CORPORATION

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Horiguchi, Kazunori Nagoya, JP 6 25

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