Multiple threshold voltage trigate devices using 3D condensation

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United States of America Patent

PATENT NO 9536795
APP PUB NO 20160247731A1
SERIAL NO

14629552

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Abstract

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A method of forming a multiple threshold voltage p-channel silicon germanium trigate device using (3D) condensation. The method may include forming a first and second fin in a single semiconductor layer, where the first and second fin have similar initial widths; thinning the second fin; performing a (3D) condensation process to condense the germanium within the first and second fin; and thinning the first fin to a similar width as the second fin.

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Patent Owner(s)

  • INTERNATIONAL BUSINESS MACHINES CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Balakrishnan, Karthik White Plains, US 335 2038
Hashemi, Pouya White Plains, US 600 4483

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