Semiconductor device and method for manufacturing the same

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United States of America Patent

PATENT NO 9812529
SERIAL NO

15048348

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Abstract

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A semiconductor device of an embodiment includes a SiC layer, a gate electrode, a gate insulating layer provided between the SiC layer and the gate electrode, and a first region provided between the SiC layer and the gate insulating layer and having a peak of nitrogen (N) concentration distribution and a peak of fluorine (F) concentration distribution.

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Patent Owner(s)

  • KABUSHIKI KAISHA TOSHIBA

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Iijima, Ryosuke Setagaya, JP 92 214
Ohashi, Teruyuki Kawasaki, JP 48 97
Shimizu, Tatsuo Shinagawa, JP 285 2225

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