Importance

Loading Importance Indicators...

Abstract

According to an embodiment, a nonvolatile semiconductor memory device comprises: a semiconductor layer; a charge accumulation layer facing the semiconductor layer via a gate insulating layer; and a control gate electrode facing the charge accumulation layer via an inter-gate insulating layer. The charge accumulation layer comprises: a first semiconductor layer facing the semiconductor layer via the gate insulating layer; a second semiconductor layer contacting the first semiconductor layer and including carbon; and a third semiconductor layer contacting the second semiconductor layer and including carbon and boron. Concentrations of carbon and boron in the second semiconductor layer are lower than 5.0×10²¹ (cm⁻³). Concentration of carbon and boron in the third semiconductor layer are higher than 1.0×10²¹ (cm⁻³) and lower than 5.0×10²¹ (cm⁻³).

Loading the Abstract Image...

First Claim