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Abstract

A semiconductor device according to an embodiment includes a semiconductor layer. A gate dielectric film is provided on a surface of the semiconductor layer. A gate electrode includes a first gate part and a second gate part. The first gate part and the second gate part are provided on the semiconductor layer via the gate dielectric film. The first gate part and the second gate part have work functions respectively different from each other, and are electrically connected to each other. A drain layer of a first conductivity type is provided in the semiconductor layer on a side of one end of the gate electrode. A source layer of a second conductivity type is provided in the semiconductor layer on a side of the other end of the gate electrode and below the gate electrode. The source layer below the gate electrode has a substantially uniform impurity concentration.

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First Claim