SWITCHING CIRCUIT, SEMICONDUCTOR SWITCHING ARRANGEMENT AND METHOD

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United States of America Patent

APP PUB NO 20160248422A1
SERIAL NO

14629551

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Abstract

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In an embodiment, a switching circuit includes a high voltage depletion mode transistor having a first leakage current and operatively connected in a cascode arrangement to a low voltage enhancement mode transistor having a second leakage current. The second leakage current is larger than the first leakage current.

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Patent Owner(s)

Patent OwnerAddress
INFINEON TECHNOLOGIES AUSTRIA AGSIEMENSSTRASSE 2 VILLACH 9500

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Curatola, Gilberto Villach, AT 56 432
Haeberlen, Oliver Villach, AT 75 346
Siemieniec, Ralf Villach, AT 120 603

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