Apparatuses, sense circuits, and methods for compensating for a wordline voltage increase
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United States of America Patent
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Feb 21, 2017
Grant Date -
Sep 1, 2016
app pub date -
May 11, 2016
filing date -
Feb 25, 2013
priority date (Note) -
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Abstract
Apparatuses, sense circuits, and methods for compensating for a voltage increase on a wordline in a memory is described. An example apparatus includes a bitline, a memory cell coupled to the bitline, a bipolar selector device coupled to the memory cell, a wordline coupled to the bipolar selector device, and a wordline driver coupled to the wordline. The apparatus further includes a model wordline circuit configured to model an impedance of the wordline and an impedance of the wordline driver, and a sense circuit coupled to the bitline and to the model wordline circuit. The sense circuit is configured to sense a state of the memory cell based on a cell current and provide a sense signal indicating a state of the memory cell. The sense circuit is further configured to adjust a bitline voltage responsive to an increase in wordline voltage as modeled by the model wordline circuit.
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