METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

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United States of America Patent

SERIAL NO

15154670

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Abstract

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A protection film is formed on a semiconductor substrate. Impurity ions are implanted into the semiconductor substrate through the protection film. The impurity is activated to form an impurity layer. The protection film is removed after forming the impurity layer. The semiconductor substrate of a surface portion of the impurity layer is removed after removing the protection film. A semiconductor layer is epitaxially grown above the semiconductor substrate after removing the semiconductor substrate of the surface portion of the impurity layer.

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Patent Owner(s)

Patent OwnerAddress
FUJITSU SEMICONDUCTOR LTD2-10-23 SHIN-YOKOHAMA KOHOKU-KU YOKOHAMA-SHI KANAGAWA 222-0033

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Ema, Taiji Yokohama, JP 186 2135
Miyake, Toshiki Yokohama, JP 4 4
Mori, Toshifumi Yokohama, JP 35 319
Okabe, Kenichi Yokohama, JP 37 600

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