Pattern formation method, control device, and semiconductor device manufacture method

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United States of America Patent

PATENT NO 10241394
APP PUB NO 20160259240A1
SERIAL NO

14848075

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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In a pattern formation method according to an embodiment, a resist pattern is formed on a first film formed on a substrate. In the process for forming the resist pattern, the resist pattern includes a first pattern including a defect in a predetermined region on the first film. Next, a second film is accumulated on the first pattern in the predetermined region. Furthermore, a second pattern is formed in the first film with the resist pattern and the second film. Then, a third pattern is formed in the predetermined region on the first film.

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Patent Owner(s)

  • TOSHIBA MEMORY CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Kanamitsu, Shingo Kanagawa, JP 28 113
Morishita, Keiko Kanagawa, JP 8 36
Sakurai, Hideaki Kanagawa, JP 172 472

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