SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD
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United States of America Patent
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app pub date -
Feb 24, 2016
filing date -
Mar 3, 2015
priority date (Note) -
Abandoned
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Abstract
A substrate processing apparatus includes a rotary table arranged in a vacuum chamber, a first reaction gas supply unit that supplies a first reaction gas to a surface of the rotary table, a second reaction gas supply unit that is arranged apart from the first reaction gas supply unit that supplies a second reaction gas, which reacts with the first reaction gas, to the rotary table surface, an activated gas supply unit that is arranged apart from the first and second reaction gas supply units and includes a discharge unit that supplies an activated etching gas to the rotary table surface, and a plurality of purge gas supply units that are provided near the discharge unit for supplying a purge gas to the rotary table surface. A flow rate of the purge gas supplied from each of the purge gas supply units can be independently controlled.
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