Method of forming a conductive line pattern in FinFET semiconductor devices
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Jan 31, 2017
Grant Date -
Sep 8, 2016
app pub date -
Feb 18, 2016
filing date -
Mar 3, 2015
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
The present invention provides a formation method of forming, on a substrate, a fin pattern in which a plurality of linear fins are arrayed, the method comprising forming a resist pattern having a line-and-space shape on the substrate, wherein the substrate includes a first active region and a second active region adjacent to each other, and in the forming the resist pattern, the resist pattern is formed on the substrate such that an interval between a first fin and a second fin becomes wider than a pitch of the fins, the first fin being closest to a boundary of the first active region and the second active region out of the fins formed in the first active region, and the second fin being closest to the boundary out of the fins formed in the second active region.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully