SEMICONDUCTOR DEVICE

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United States of America Patent

APP PUB NO 20160260705A1
SERIAL NO

14828802

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Abstract

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A semiconductor device according to an embodiment includes a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type in contact with the first semiconductor region, a third semiconductor region of the first conductivity type in contact with the second semiconductor region and spaced from the first semiconductor region, a first insulating film provided between the first semiconductor region and the third semiconductor region on the second semiconductor region, a first electrode provided on the first insulating film, a high-pass filter connected between the first semiconductor region and the third semiconductor region, and a low-pass filter connected between the second semiconductor region and the third semiconductor region.

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Patent Owner(s)

Patent OwnerAddress
KABUSHIKI KAISHA TOSHIBA1-1 SHIBAURA 1-CHOME MINATO-KU TOKYO 105-0023

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
IKIMURA, Takehito Yokohama Kanagawa, JP 11 40

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