SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
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United States of America Patent
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Issued Date -
Sep 8, 2016
app pub date -
Sep 8, 2015
filing date -
Mar 6, 2015
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Abandoned
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Abstract
A semiconductor device has two first semiconductor regions that are arranged at intervals on a surface of a semiconductor substrate, one of the two semiconductor regions being a source region and another of the two semiconductor regions being a drain region, and a contact that extends from at least one of the two first semiconductor regions on the semiconductor substrate. The contact comprises a single-crystal first semiconductor layer arranged to contact the surface of the semiconductor substrate, a compound layer that is arranged on the first semiconductor layer and includes a semiconductor in the first semiconductor layer and a metal, and a metal layer arranged on the compound layer.
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