Importance

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Abstract

A semiconductor device according to an embodiment described below comprises agate electrode disposed sandwiching a gate insulating film, on an active area. The element isolation insulating film comprises: a first element isolation insulating film having a first width; and a second element isolation insulating film having a second width larger than the first width. The first element isolation insulating film includes in an surface thereof a first element isolation trench having a third width, and the second element isolation insulating film includes in an surface thereof a second element isolation trench having a fourth width larger than the third width. The first element isolation trench has disposed therein a third element isolation insulating film, and the second element isolation trench has disposed therein a fourth element isolation insulating film different from the third element isolation insulating film.

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First Claim