NON-VOLATILE RESISTIVE RANDOM ACCESS MEMORY DEVICE
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United States of America Patent
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N/A
Issued Date -
Sep 8, 2016
app pub date -
Jun 25, 2015
filing date -
Mar 6, 2015
priority date (Note) -
Abandoned
status (Latency Note)
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Abstract
According to one embodiment, a resistive random access memory device includes a first wiring extending in a first direction, a first ion source layer provided in a first portion on the first wiring and a first variable resistance layer provided on the first ion source layer. The resistive random access memory device also includes a second wiring, which is provided on the first variable resistance layer, faces the first portion, and extends in a second direction different from the first direction. The resistive random access memory device also includes a second variable resistance layer provided in a second portion on the second wiring, a second ion source layer provided on the second variable resistance layer and a third wiring, which is provided on the second ion source layer, faces the second portion, and extends in the first direction.
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