METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

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United States of America Patent

APP PUB NO 20160260795A1
SERIAL NO

14992067

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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In a semiconductor device including a nonvolatile memory, a novel stacked capacitive element is provided. The semiconductor device includes the stacked capacitive element including a first capacitive electrode made of an n-type well region formed in a semiconductor substrate, a second capacitive electrode formed so as to overlap the first capacitive electrode via a first capacitive insulating film, a third capacitive electrode formed so as to overlap the second capacitive electrode via a second capacitive insulating film, and a fourth capacitive electrode formed so as to overlap the third capacitive electrode via a third capacitive insulating film. To the first and third capacitive electrodes, a first potential is applied and, to the second and fourth capacitive electrodes, a second potential different from the first potential is applied.

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Patent Owner(s)

Patent OwnerAddressTotal Patents
RENESAS ELECTRONICS CORPORATIONTOKYO11913

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Abe, Satoshi Tokyo, JP 104 826
Chakihara, Hiraku Tokyo, JP 79 721
Kawashima, Yoshiyuki Tokyo, JP 58 362
Saito, Kentaro Tokyo, JP 36 208
Umeda, Kyoko Tokyo, JP 4 3

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