In a semiconductor device including a nonvolatile memory, a novel stacked capacitive element is provided. The semiconductor device includes the stacked capacitive element including a first capacitive electrode made of an n-type well region formed in a semiconductor substrate, a second capacitive electrode formed so as to overlap the first capacitive electrode via a first capacitive insulating film, a third capacitive electrode formed so as to overlap the second capacitive electrode via a second capacitive insulating film, and a fourth capacitive electrode formed so as to overlap the third capacitive electrode via a third capacitive insulating film. To the first and third capacitive electrodes, a first potential is applied and, to the second and fourth capacitive electrodes, a second potential different from the first potential is applied.
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