Importance

Loading Importance Indicators...

Abstract

A non-volatile semiconductor memory device has a plurality of semiconductor areas that are arranged at intervals in a first direction on a semiconductor substrate and extend in a second direction crossing the first direction, a gate insulating layer that is arranged on the semiconductor areas, a charge accumulation layer that is arranged on the gate insulating layer and repeats one time or more a width change where a width of the first direction decreases monotonously, increases thereafter, and decreases again, upward from the gate insulating layer, an inter-electrode insulating layer that is arranged on the charge accumulation layer and covers at least a part of a surface of the charge accumulation layer, and a control electrode that is arranged on the inter-electrode insulating layer.

Loading the Abstract Image...

First Claim