Forming resistive random access memories together with fuse arrays
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United States of America Patent
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Aug 15, 2017
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app pub date -
May 12, 2016
filing date -
Aug 4, 2010
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Abstract
A resistive random access memory array may be formed on the same substrate with a fuse array. The random access memory and the fuse array may use the same active material. For example, both the fuse array and the memory array may use a chalcogenide material as the active switching material. The main array may use a pattern of perpendicular sets of trench isolations and the fuse array may only use one set of parallel trench isolations. As a result, the fuse array may have a conductive line extending continuously between adjacent trench isolations. In some embodiments, this continuous line may reduce the resistance of the conductive path through the fuses.
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