SEMICONDUCTOR DEVICE

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United States of America Patent

APP PUB NO 20160265501A1
SERIAL NO

15063467

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ATTORNEY / AGENT: (SPONSORED)

Importance

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Abstract

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When normal operation is detected by a self-interruption signal source and a first transistor is on, if an on-signal is inputted to an IN terminal, a second transistor is turned on and a third transistor is turned off. Accordingly, an IGBT is turned on. In this state, if an abnormality is detected by the self-interruption signal source, the second transistor is turned off and the third transistor is turned on. Accordingly, a gate terminal of the IGBT is connected to an emitter terminal via the first and third transistors, and charges accumulated by gate capacitance of the IGBT are rapidly discharged. Consequently, if a comparator detects that a collector voltage of the IGBT has exceeded a predetermined voltage, the first transistor is turned off, and a gradual interruption, in which the charges accumulated by the gate capacitance are gradually released by a resistor, is performed.

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Patent Owner(s)

Patent OwnerAddress
FUJI ELECTRIC CO LTDKAWASAKI COUNTY OF KANAGAWA CITY JAPAN KAWASAKI-SHI KANAGAWA

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
MIYAZAWA, Shigemi Matsumoto city, JP 27 102

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