Semiconductor storage device
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United States of America Patent
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Mar 28, 2017
Issued Date -
N/A
app pub date -
Oct 12, 2015
filing date -
Mar 9, 2015
priority date (Note) -
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Abstract
A semiconductor storage device according to the present embodiments includes a first bit line and a first word line. A resistance-change memory element is connected to the first bit line and the first word line. A sense node is connected to the first bit line in a data read operation. A first transistor is connected between the sense node and the first bit line. A second transistor connects the first bit line and a power supply to each other in a data write operation. A first operational amplifier has one input connected to the first bit line, other input receiving a reference voltage, and an output connected in common to a gate of the first transistor and a gate of the second transistor. A sense circuit is connected to the sense node.
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