Semiconductor memory device and memory system

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United States of America Patent

PATENT NO 9576665
APP PUB NO 20160267980A1
SERIAL NO

14847086

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Abstract

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A semiconductor memory device includes: a first string unit including first and second memory cell transistors; a second string unit including third and fourth memory cell transistors; a first word line coupled to gates of the first and third memory cell transistors; and a second word line coupled to gates of the second and fourth memory cell transistors. When the first string unit is selected and the first word line is selected, a first voltage is applied. The first voltage is larger than an initial value of the voltage in the step-up operation.

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Patent Owner(s)

  • TOSHIBA MEMORY CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Akamine, Takayuki Yokohama, JP 32 94
Shirakawa, Masanobu Chigasaki, JP 261 1674
Sukegawa, Hiroshi Tokyo, JP 138 3559

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