METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
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United States of America Patent
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app pub date -
Sep 2, 2015
filing date -
Mar 10, 2015
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Abandoned
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Abstract
According to one embodiment, a method for manufacturing a semiconductor device, includes: selectively forming a plurality of electrode layers on a first surface of a semiconductor substrate, the semiconductor substrate having the first surface and a second surface; and dividing the semiconductor substrate by forming a gap piercing from the first surface to the second surface of the semiconductor substrate, the gap being formed by dry etching the first surface of the semiconductor substrate exposed between the plurality of electrode layers, the plurality of electrode layers being used as masks.
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