Semiconductor memory device having memory cells provided in a height direction
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United States of America Patent
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Nov 7, 2017
Grant Date -
Sep 15, 2016
app pub date -
Sep 9, 2015
filing date -
Mar 13, 2015
priority date (Note) -
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Abstract
According to an embodiment, a semiconductor memory device comprises: a memory string comprising a plurality of memory cells connected in series therein; and a contact electrically connected to one end of the memory string. The memory string comprises a plurality of control gate electrodes, and a semiconductor layer. The contact comprises a contact layer, the contact layer having a plate-like shape whose longer direction is a first direction parallel to the substrate, and the contact layer having its lower surface electrically connected to the one end of the semiconductor layer. Moreover, the contact layer includes a metal layer, a silicon based layer, and a second conductive layer. The metal layer includes tungsten. The silicon based layer includes a material including silicon. The second conductive layer covers side surfaces of the metal layer and the silicon based layer.
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