SEMICONDUCTOR DEVICE

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United States of America Patent

APP PUB NO 20160268219A1
SERIAL NO

14839407

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Abstract

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According to an embodiment, a semiconductor device includes a semiconductor layer, a first insulating layer that has refractive index of 1.95 or less, contains silicon nitride, and located on the semiconductor layer, and a resin that is provided on the first insulating layer and is in contact with the first insulating layer.

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Patent Owner(s)

Patent OwnerAddress
KABUSHIKI KAISHA TOSHIBA1-1 SHIBAURA 1-CHOME MINATO-KU TOKYO JAPAN

International Classification(s)

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
FURUKAWA, Chisato Komatsu Ishikawa, JP 38 961
IWAKAJI, Yoko Minato Tokyo, JP 58 119
MOTAI, Takako Yokohama Kanagawa, JP 26 210
OGAWA, Masaaki Sagamihara Kanagawa, JP 40 245

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