SEMICONDUCTOR MEMORY DEVICE

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United States of America Patent

APP PUB NO 20160268279A1
SERIAL NO

14970876

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Abstract

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A semiconductor memory device includes a plurality of memory blocks provided in a first direction. Each memory block includes a substrate, a plurality of conductive layers stacked on the substrate at a certain distance, and a plurality of semiconductor layers opposed to the conductive layers via an insulating layer and a charge accumulation layer. The semiconductor layers have a longitudinal direction in a direction perpendicular to the substrate. The conductive layers and the semiconductor layers are provided in the first direction. The distance between two memory blocks adjacent in the first direction is larger than the distance between the conductive layers adjacent in the first direction in each memory block.

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Patent Owner(s)

Patent OwnerAddress
KABUSHIKI KAISHA TOSHIBA1-1 SHIBAURA 1-CHOME MINATO-KU TOKYO

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
KITO, Masaru Kuwana, JP 233 11011
UCHIYAMA, Yasuhiro Yokkaichi, JP 38 144

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