Semiconductor device and method for manufacturing the same
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United States of America Patent
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Apr 4, 2017
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app pub date -
Aug 10, 2015
filing date -
Mar 13, 2015
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Abstract
According to one embodiment, the contact electrode extends in the inter-layer insulating layer toward the second semiconductor region. The metal silicide film is in contact with the second semiconductor region and the contact electrode. The metal silicide film includes a first part and a second part. The first part is provided between a bottom of the contact electrode and the second semiconductor region. The second part is provided on a surface of the second semiconductor region between the first part and the gate electrode. A bottom of the second part is located at a position shallower than a bottom the first part.
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