Semiconductor memory device

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United States of America Patent

PATENT NO 9608001
SERIAL NO

14833202

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Abstract

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According to one embodiment, a semiconductor memory device includes a substrate; a first stacked body provided on the substrate, the first stacked body including a plurality of electrode layers and a plurality of insulating layers, each of the plurality of insulating layers being provided between the plurality of electrode layers; a semiconductor film provided in the first stacked body and extending in a stacking direction of the first stacked body; and a second stacked body provided on the substrate and separately from the first stacked body, the second stacked body including a same layer structure as the first stacked body. The second stacked body includes a first contact portion electrically connected to an external portion; and a second contact portion electrically connected to an external portion different from the first contact portion.

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Patent Owner(s)

  • TOSHIBA MEMORY CORPORATION

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Fukuzumi, Yoshiaki Yokkaichi, JP 334 10815

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