Importance

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Abstract

A resistance variable memory has a memory cell area, a plurality of first wires arranged at intervals in a first direction in the memory cell area and arranged at intervals in a laminating direction, a plurality of second wires arranged at intervals in a second direction in the memory cell area and alternatively arranged with the first wires in a laminating direction, memory cells arranged at each crossing point between the first wire and the second wire in the memory cell area and include variable resistance elements, a first wire interconnecting area arranged separately from the memory cell area and in which conductive layers electrically conducting with the plurality of first wires are arranged, and a second wire interconnecting area arranged separately from the memory cell area and the first wire interconnecting area and in which conductive layers electrically conducting with the plurality of second wires are arranged.

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First Claim