Importance

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Abstract

According to one embodiment, a semiconductor device includes a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type, a third semiconductor region of the second conductivity type, a fourth semiconductor region of the first conductivity type, a gate electrode, and a gate insulating layer. The first semiconductor region includes first portions and second portions. A length in a second direction of the second portion is longer than a length in the second direction of the first portion. The plurality of first portions and the plurality of second portions are provided alternately in a third direction. Part of the third semiconductor region is located between the second portions. An impurity concentration of the second conductivity type of the third semiconductor region is lower than an impurity concentration of the second conductivity type of the second semiconductor region.

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First Claim