Method of manufacturing semiconductor device

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United States of America Patent

PATENT NO 9935232
SERIAL NO

14932470

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Abstract

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According to one embodiment, a method of manufacturing a semiconductor device includes a step of grinding to thin a first semiconductor wafer on which a semiconductor device is formed in a state in which a surface of a second semiconductor wafer is fixed on a chuck table of a grinding device after bonding the first semiconductor wafer to the second semiconductor wafer. The method includes a step of fixing a surface of the first semiconductor wafer on the chuck table and grinding the surface of the second semiconductor wafer in a state in which the first semiconductor wafer is bonded to the second semiconductor wafer prior to the grinding step to thin the first semiconductor wafer.

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Patent Owner(s)

  • TOSHIBA MEMORY CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Inoue, Shouta Oita Oita, JP 2 1
Tanaka, Takamasa Oita Oita, JP 6 40
Tanida, Kazumasa Oita Oita, JP 63 740
Toyota, Gen Oita Oita, JP 20 70
Yamamoto, Susumu Oita Oita, JP 131 1289
Yoshida, Takamitsu Oita Oita, JP 6 91

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