RESISTANCE CHANGE MEMORY
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
N/A
Issued Date -
Sep 15, 2016
app pub date -
Aug 26, 2015
filing date -
Aug 26, 2015
priority date (Note) -
Abandoned
status (Latency Note)
Importance
Abstract
According to one embodiment, a resistance change memory includes first and second semiconductor pillars on a conductive region, a first word line including a first portion surrounding a side surface of the first pillar, a second portion surrounding a side surface of the second pillar, and a third portion connecting between the first and second portions, the first and second portions being physically separated from one another, a first resistance change element connected to an upper portion of the first semiconductor pillar, and a second resistance change element connected to an upper portion of the second semiconductor pillar.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully