Semiconductor laser having a ridge structure widened on one side
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United States of America Patent
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Jan 15, 2019
Grant Date -
Sep 15, 2016
app pub date -
Oct 14, 2014
filing date -
Oct 14, 2013
priority date (Note) -
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Abstract
A semiconductor laser includes a main body and a ridge structure arranged on the main body, the ridge structure being oriented along a longitudinal axis above an active zone, wherein the ridge structure has a first width, the ridge structure has two opposite end faces along the longitudinal axis, adjacent to at least one end face, the ridge structure has an end section arranged on one side with respect to a center axis of the ridge structure such that the ridge structure is widened on one side adjacent to the end face, and on an opposite side of the ridge structure relative to the end section a fracture trench is arranged adjacent to the end face and at a distance from the ridge structure in a surface of the main body.
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